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PD 91573A
IRG4PH50UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
* UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode www..com * New IGBT design provides tighter parameter distribution and higher efficiency than previous generations * IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations * Industry standard TO-247AC package
C
UltraFast CoPack IGBT
VCES = 1200V
G E
VCE(on) typ. = 2.78V
@VGE = 15V, IC = 24A
n-cha nn el
Benefits
* Higher switching frequency capability than competitive IGBTs * Highest efficiency available * HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
1200 45 24 180 180 16 180 20 200 78 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbf*in (1.1N*m)
Units
V A
V W
C
Thermal Resistance
Parameter
RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
--- --- --- --- ---
Typ.
--- --- 0.24 --- 6 (0.21)
Max.
0.64 0.83 --- 40 ---
Units
C/W
g (oz)
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1
7/7/2000
IRG4PH50UD
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on) www..com VGE(th) VGE(th)/TJ gfe ICES VFM IGES
Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown VoltageS 1200 -- -- V Temperature Coeff. of Breakdown Voltage -- 1.20 -- V/C Collector-to-Emitter Saturation Voltage -- 2.56 3.5 -- 2.78 3.7 -- 3.20 -- V -- 2.54 -- Gate Threshold Voltage 3.0 -- 6.0 Temperature Coeff. of Threshold Voltage -- -13 -- mV/C Forward Transconductance T 23 35 -- S Zero Gate Voltage Collector Current -- -- 250 A -- -- 6500 Diode Forward Voltage Drop -- 2.5 3.5 V -- 2.1 3.0 Gate-to-Emitter Leakage Current -- -- 100 nA
Conditions VGE = 0V, IC = 250A VGE = 0V, IC = 1.0mA IC = 20A VGE = 15V IC = 24A See Fig. 2, 5 IC = 45A IC = 24A, TJ = 150C VCE = VGE, IC = 250A VCE = VGE, IC = 250A VCE = 100V, IC = 24A VGE = 0V, VCE = 1200V VGE = 0V, VCE = 1200V, TJ = 150C IC = 16A See Fig. 13 IC = 16A, TJ = 150C VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 160 27 53 47 24 110 180 2.10 1.50 3.60 46 27 240 330 6.38 13 3600 160 31 90 164 5.8 8.3 260 680 120 76 Max. Units Conditions 250 IC = 24A 40 nC VCC = 400V See Fig. 8 80 VGE = 15V -- TJ = 25C -- ns IC = 24A, VCC = 800V 170 VGE = 15V, RG = 5.0 260 Energy losses include "tail" and -- diode reverse recovery. -- mJ See Fig. 9, 10, 18 4.6 -- TJ = 150C, See Fig. 11, 18 -- ns IC = 24A, VCC = 800V -- VGE = 15V, RG = 5.0 -- Energy losses include "tail" and -- mJ diode reverse recovery. -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz 135 ns TJ = 25C See Fig. 245 TJ = 125C 14 IF = 16A 10 A TJ = 25C See Fig. 15 TJ = 125C 15 VR = 200V 675 nC TJ = 25C See Fig. 16 di/dt = 200A/s 1838 TJ = 125C -- A/s TJ = 25C See Fig. -- TJ = 125C 17
2
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IRG4PH50UD
30 25
F o r b o th :
LOAD CURRENT (A)
20
S q u a re w a v e :
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D u ty c y c le : 5 0 % TJ = 1 2 5 C T sink = 9 0 C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 40 W
6 0% of rate d volta ge
I
15
10
5
Id e a l d io d e s
0 0.1 1 10 100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
1000
I C , Collector-to-Emitter Current (A)
100
I C, Collector-to-Emitter Current (A)
100
TJ = 150 o C
TJ = 150 o C
10
10
TJ = 25 o C V = 15V 20s PULSE WIDTH
GE 1 10
TJ = 25 o C V = 50V 5s PULSE WIDTH
CC 5 6 7 8 9 10 11 12
1
1
VCE , Collector-to-Emitter Voltage (V)
VGE , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
IRG4PH50UD
50 4.0
40
VCE , Collector-to-Emitter Voltage(V)
V = 15V 80 us PULSE WIDTH
GE
IC = 48 A
Maximum DC Collector Current(A)
3.5
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30
IC = 24 A
3.0
20
IC = 12 A
2.5
10
0 25 50 75 100 125 150
2.0 -60 -40 -20
0
20
40
60
80 100 120 140 160
T C , Case Temperature ( C)
TJ , Junction Temperature ( C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
1
Thermal Response (Z thJC )
0.50 0.20 0.1 0.10 0.05 0.02 0.01
0.01
SINGLE PULSE (THERMAL RESPONSE)
0.001 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1 0.0001 0.001 0.01
P DM t1 t2 1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PH50UD
7000
VGE , Gate-to-Emitter Voltage (V)
6000
VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc
20
VCC = 400V I C = 24A
16
C, Capacitance (pF)
5000
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Cies
4000
12
3000
8
2000
C oes C res
4
1000
0 1 10 100
0 0 40 80 120 160 200
VCE , Collector-to-Emitter Voltage (V)
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
5.00
Total Switching Losses ( mJ)
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V CC = 480V V GE = 15V TJ = 25 C 25A 4.60 I C = 24A
100
5.0 RG = Ohm VGE = 15V VCC = 800V
4.20
IC = 48 A
10
IC = 24 A IC = 12 A
3.80
3.40
3.00 0 10 20 30 40 50
1 -60 -40 -20
0
20
40
60
80 100 120 140 160
RG , Gate Resistance (Ohm)
TJ , Junction Temperature ( C )
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
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5
IRG4PH50UD
15
9
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6
I C , Collector-to-Emitter Current (A)
20 30 40 50
Total Switching Losses (mJ)
RG TJ VCC 12 VGE
= Ohm 5.0 = 150 C = 480V = 15V
1000
VGE = 20V T J = 125 oC
100
10
3
0 0 10
SAFE OPERATING AREA
1 1 10 100 1000 10000
I C , Collector-to-emitter Current (A)
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
1000
Fig. 12 - Turn-Off SOA
Instantaneous Forward Current ( A )
100
T J = 150C
10
T J = 125C T J = 25C
1 0.0 2.0 4.0 6.0 8.0
F orward V oltage D rop - V F M (V )
Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current
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IRG4PH50UD
300 40
VR = 200V T J = 125C T J = 25C
30 200
VR = 200 V T J = 125C T J = 25C
I F = 1 6A I F = 8 .0 A
I R R M - (A )
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trr - (ns)
IF = 3 2 A
20
I F = 32A I F = 16 A I F = 8 .0A
100 10
0 100
d i f /dt - (A / s)
1000
0 100
di f /dt - (A / s)
1000
Fig. 14 - Typical Reverse Recovery vs. dif/dt
1200
Fig. 15 - Typical Recovery Current vs. dif/dt
1000
VR = 200V T J = 125C T J = 25C
900
VR = 200V T J = 125C T J = 25C
600
I F = 1 6A
di(rec)M /dt - (A / s)
I F = 32 A
Q R R - (nC )
100
I F = 32 A I F =1 6A I F = 8 .0 A
I F = 8.0A
300
0 100
di f /dt - (A / s)
1000
10 100
1000
di f /d t - (A / s)
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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7
IRG4PH50UD
Same ty pe device as D .U.T.
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80% of Vce 430F D .U .T.
Vge VC 90% 10%
90%
td(off)
10% IC 5%
tr t d(on) Eon E ts = (Eon +Eoff )
tf t=5s Eoff
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg
trr Ic
Q rr =
trr id ddt Ic t tx
tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic
1 0 % Irr V cc
V pk Irr
D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 Vce d E o n = V ce ieIc t dt t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4
E re c =
t1
Vd Ic dt
t4 V d id d t t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
8
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IRG4PH50UD
V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T .
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V O L T A G E IN D .U .T .
C U R R E N T IN D 1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
L 1000V 50V 600 0F 100V Vc*
D.U.T.
RL= 0 - 800V
800V 4 X I C @25C
Figure 19. Clamped Inductive Load Test Circuit
Figure 20. Pulsed Collector Current Test Circuit
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IRG4PH50UD
Notes:
Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10H, RG= 5.0 (figure 19) S Pulse width 80s; duty factor 0.1%. T Pulse width 5.0s, single shot.
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Case Outline TO-247AC
3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .2 5 ( .0 1 0 )
-A5 .5 0 (.2 17 )
-D-
1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B-
M
DBM
5 .3 0 (.2 0 9 ) 4 .7 0 (.1 8 5 ) 2.5 0 ( .0 8 9) 1.5 0 ( .0 5 9) 4
NOTE S: 1 D IM E N S IO N S & T O LE R A N C IN G P E R A N S I Y 14 .5M , 1 98 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL LIM E T E R S (IN C H E S ). 4 C O N F O R M S T O J E D E C O U T L IN E T O -2 4 7A C .
2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 1 2 3
2X
5.5 0 (.2 1 7) 4.5 0 (.1 7 7)
-C-
LEAD 1234-
A S S IG N M E N T S GAT E COLLECTO R E M IT T E R COLLECTO R
*
1 4 .8 0 (.5 8 3 ) 1 4 .2 0 (.5 5 9 )
4 .3 0 (.1 7 0 ) 3 .7 0 (.1 4 5 ) 0 .8 0 (.0 3 1 ) 0 .4 0 (.0 1 6 ) 2 .6 0 ( .1 0 2 ) 2 .2 0 ( .0 8 7 )
*
3X C AS
2 .4 0 (.0 9 4 ) 2 .0 0 (.0 7 9 ) 2X 5 .4 5 (.2 1 5 ) 2X
LO N G E R LE A D E D (2 0m m ) V E R S IO N A V A IL A B L E (T O -2 47 A D ) T O O R D E R A D D "-E " S U F F IX TO PAR T NUM BER
3X
1 .4 0 ( .0 56 ) 1 .0 0 ( .0 39 ) 0.2 5 (.0 1 0 ) M
3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 )
CO NF O RM S TO J EDEC O U TL IN E TO -2 47AC (T O -3P)
D im e n s io n s in M illim e te rs a n d (In c h e s )
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 7/00
10
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